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  Datasheet File OCR Text:
 Ordering number:EN4657
FP303
TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
* Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting. * The FP303 is composed of chips equivalent to the 2SD1623 and SB05-05CP, which are placed in one package.
Package Dimensions
unit:mm 2099A
[FP303]
1:Base 2:Collector 3:Emitter 4:Cathode 5:Anode 6:Cathode 7:Collector SANYO:PCP5 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 50 55 500 5 -55 to +125 -55 to +125 V V mA A C C VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on ceramic board (250mm2x0.8mm) 60 50 6 2 4 400 0.8 150 -55 to +150 V V V A A mA W C C Symbol Conditions Ratings Unit
Electrical Connection
1:Base 2:Collector 3:Emitter Common 4:Cathode 5:Anode 6:Cathode 7:Collector (Top View)
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/N2394TS (KOTO) B8-0025 No.4657-1/4
FP303
Continued from preceding page.
Electrical Characteristics at Ta=25C
Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF IR C trr Rthj-a IR=200A IF=500mA VR=25V VR=10V, f=1MHz IF=IR=100mA, See sepcified Test Circuit. Mounted on ceramic board (250mm2x0.8mm) 22 10 170 50 0.55 50 V V A pF ns C/W ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) VCB=50V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=1.5A VCE=10V, IC=50mA VCE=10V, f=1MHz IC=1.0A, IB=50mA IC=1.0A, IB=50mA 60 50 6 60 550 30 140 40 150 12 0.15 0.9 0.4 1.2 MHz pF V V V V V ns ns ns 0.1 0.1 560 A A Symbol Conditons Ratings min typ max Unit
V(BR)CBO IC=10A, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO IE=10A, IC=0 ton tstg tf See specified Test Circuit See specified Test Circuit See specified Test Circuit
Marking:303
No.4657-2/4
FP303
No.4657-3/4
FP303
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice.
PS No.4657-4/4


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